| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC Collector Current(IC) |
100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) |
4.7KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
4.7KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio |
1 |
| 直流电流增益hFE DC Current Gain(hFE) |
20 |
| 截止频率fT Transtion Frequency(fT) |
250MHz |
| 耗散功率Pc Power Dissipation |
0.2W/200mW |
| Description & Applications |
Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJV4101R |
| 描述与应用 |
特性 •开关电路，逆变器，接口电路，驱动器电路 •内置偏置电阻（R1=4.7KΩ，R2=4.7KΩ） •FJV4101R的补充 |