集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC Collector Current(IC) | 2A |
截止频率fT Transtion Frequency(fT) | 165MHz |
直流电流增益hFE DC Current Gain(hFE) | 450 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 220mV/0.22V |
耗散功率Pc Power Dissipation | 625mW/0.625W |
Description & Applications | SOT23 NPN SILICON POWER(SWITCHING) TRANSISTORS 625mW POWER DISSIPATION 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage Extremely Low Equivalent On Resistance |
描述与应用 | SOT23 NPN硅功率(开关)晶体管 功耗625mW 12A峰值脉冲电流 优秀HFE特性12A(脉冲) 极低的饱和电压 极低的等效导通电阻 |