集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -12V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | -12V |
集电极连续输出电流IC
Collector Current(IC) | -1.25A |
截止频率fT
Transtion Frequency(fT) | 205MHz |
直流电流增益hFE
DC Current Gain(hFE) | 180~275 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | −200mV/-0.2V |
耗散功率Pc
PoWer Dissipation | 500mW/0.5W |
| Description & Applications | PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR MEDIUM POWER TRANSISTOR FEATURES Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A |
| 描述与应用 | PNP硅平面高增益 中等功率晶体管 特点 非常低的等效导通电阻 |