| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-60V/60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
-50V/50V |
| 集电极连续输出电流IC Collector Current(IC) |
-150mA/150mA |
| 截止频率fT Transtion Frequency(fT) |
140MHz/180MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
120~560 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
-500mV/400mV |
| 耗散功率Pc Power Dissipation |
300mW |
| Description & Applications |
Features •Emitter common (dual transistors) •Includes a 2SA1037AK and a 2SC2412K transistor in a EMT or UMT or SMT package. •PNP and NPN transistors have common emitters. •Mounting cost and area can be cut in half. |
| 描述与应用 |
特点 •发射极普通的（双晶体管） •在EMT或UMT或SMT封装包括一个2SA1037AK的2SC2412K晶体管。 •PNP和NPN晶体管有共同的发射器。 •安装成本和面积可减少一半 |