| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 120V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 100V |
| 集电极连续输出电流IC Collector Current(IC) | 1A |
| Q1基极输入电阻R1 Input Resistance(R1) | 120MHz |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 140~400 |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 100mV |
| Q2基极输入电阻R1 Input Resistance(R1) | 1100mW |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | Features • NPN Epitaxial Planar Silicon Transistor • LCD Backlight Drive Applications • Composite type with 2 transistors contained in the PCP5 package currently in use, improving the mounting efficiency greatly. • The FP216 is composed of two chips, each being equivalent to the 2SC3646, placed in one package. |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 特点 •NPN平面外延硅晶体管 •LCD背光驱动应用 •复合型与包含在PCP5包装目前正在使用的2个晶体管，大大提高安装效率。 •FP216是由两个芯片组成，每个被相当于2SC3646，放置在一个包装。 |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | |
| 描述与应用 | |