| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 5A |
| Q1基极输入电阻R1 Input Resistance(R1) | 180MHz |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 140~400 |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 220mV |
| Q2基极输入电阻R1 Input Resistance(R1) | 2000mW |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | Features • NPN Epitaxial Planar Silicon Transistor • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. • The FX506 houses two chips, each being equivalent to the 2SD1803, in one package. • Matched pair characteristics. • High-Current Switching Applications |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 特点 •NPN平面外延硅晶体管 •在一个封装中包含2个PNP晶体管，促进高密度安装复合型。 •FX506的房子，每个被相当于两个芯片2SD1803，在一个包装。 •配对特性。 •高电流开关应用 |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | |
| 描述与应用 | |