集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -220V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | -200V |
集电极连续输出电流IC
Collector Current(IC) | -2A |
截止频率fT
Transtion Frequency(fT) | 110MHz |
直流电流增益hFE
DC Current Gain(hFE) | 100~300 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -370mV/-0.37V |
耗散功率Pc
PoWer Dissipation | 3W |
| Description & Applications | PNP SILICON PLANAR HIGH CURRENT TRANSISTORS FEATURES 4 Amps continuous current , up to 15 Amps peak current Very low saturation voltages Excellent gain characteristics specified up to 10 Amps COMPLEMENTARY TYPES FZT855 |
| 描述与应用 | PNP硅平面高电流晶体管 特点 4安培连续电流高达15安培的峰值电流 极低的饱和电压 出色的增益特性可达10安培 互补类型FZT855 |