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Parameters:

  • Model:GN1L4M
  • Manufacturer:HUABAN
  • Date Code:00+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:M31
  • Package:SOT-323/SC-70

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-60V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-50V
集电极连续输出电流IC Collector Current(IC)-100mA/-0.1A
基极输入电阻R1 Input Resistance(R1)47KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
电阻比(R1/R2) Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)85~340
截止频率fT Transtion Frequency(fT)
耗散功率Pc Power Dissipation0.15W/150mW
Description & ApplicationsFeature •silicon transistor •medium speed switching resistor built-in type PNP transistor •resistor built-in type •complementary to GA1L4M
描述与应用特点 •硅晶体管 •中速开关电阻器内置型PNP晶体管 •电阻器内置型 •GA1L4M互补

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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GN1L4M
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