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Parameters:

  • Model:H2N7002XIT1
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:025Y
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage2.5v
最大漏极电流Id Drain Current200mA/0.2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance2.8Ω/Ohm 50mA,5V
开启电压Vgs(th) Gate-Source Threshold Voltage0.375V
耗散功率Pd Power Dissipation
Description & ApplicationsN-Channel MOSFET (60V, 0.2A)
描述与应用

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H2N7002XIT1
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