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Inventory:3000 Min Order:10
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Parameters:

  • Model:HAT2206C-EL-E
  • Manufacturer:HUABAN
  • Date Code:06+NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:VW
  • Package:SOT-363

Drain-Source Voltage (Vds)  12V

Vgs(±)

Gate-Source Voltage

 8V
Drain Current (Id)  2A
Drain-Source On-State (Rds)  RDS (on) = 65 mΩ typ. (at VGS = 4.5 V) 

Vgs (th)

Gate-Source Threshold Voltage

 
Power dissipation (Pd)  830MW/0.83W
Description & Applications  Silicon N Channel MOS FET 
Power Switching
• Low on-resistance 
RDS (on) = 65 mΩ typ. (at VGS = 4.5 V) 
• Low drive current. 
• High density mounting 
• 1.8 V gate drive devices.

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