| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60±10V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 60±10V |
| 集电极连续输出电流IC Collector Current(IC) | 1A |
| 基极输入电阻R1 Input Resistance(R1) | 0.47KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 4.7KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.1 |
| 直流电流增益hFE DC Current Gain(hFE) | 200-300 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 2W |
| Description & Applications | FEATURES • High current drives such as IC outputs and actuators available • On-chip bias resistor • The zener diode connected between the collector and base of the transistor • Low power consumption during drive |
| 描述与应用 | 特性 •高电流驱动IC输出和执行器等 •片上偏置电阻 • 齐纳二极管连接的晶体管的集电极和基极之间 •低功耗在运行时 |