集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 25V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 20V |
集电极连续输出电流IC
Collector Current(IC) | 700mA/0.7A |
截止频率fT
Transtion Frequency(fT) | 150MHz |
直流电流增益hFE
DC Current Gain(hFE) | 40 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 500mV/0.5V |
耗散功率Pc
Power Dissipation | 225mW/0.225W |
| Description & Applications | NPN EPITAXIAL TRANSISTOR The HMBT8050 is designed for general purpose amplifier applications. High DC Current hFE=150-400 at IC=150mA Complementary to HMBT8550 |
| 描述与应用 | NPN外延晶体管 专为通用放大器的应用程序。 高DC电流在IC=150MA时HFE=150-400 对管HMBT8550 |