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Parameters:

  • Model:HN1C05FE-A
  • Manufacturer:HUABAN
  • Date Code:0544+ 05+
  • Standard Package:4000
  • Min Order:10
  • Mark/silk print/code/type:FA
  • Package:SOT-563/ES6

V(BR) CBO

Collector-Base Voltage

 15V

V(BR) CEO

Collector-Emitter Voltage

 12V
Collector Current(IC)  0.4A
Transtion Frequency(fT)  130MHZ
DC Current Gain(hFE)  300~1000

VCE (sat)

Collector-Emitter Saturation Voltage

 0.25V
Power Dissipation (Pd)  0.1W
Description & Applications  TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 
 
Low Frequency Amplifier Applications 
Muting Application 
Switching Application 
 * Low Saturation Voltage: VCE(sat)(1)=15mV (Typ.) 
:@ IC = 10mA/ IB = 0.5mA 
* High Collector Current :IC=400mA(Max.)
Technical Documentation Download Read Online

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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HN1C05FE-A
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