| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -20V |
| 集电极连续输出电流IC Collector Current(IC) | -200mA/0.2A |
| 基极输入电阻R1 Input Resistance(R1) | 0.22KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 2.2KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.1 |
| 直流电流增益hFE DC Current Gain(hFE) | 150 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 2.0W |
| Description & Applications | FEATURES •COMPOUND TRANSISTOR •on-chip resistor PNP silicon epitaxial transistor For mid-speed switching •Up to 2A high current drives such as ICs, motors, and solenoids available •On-chip bias resistor •Low power consumption during drive |
| 描述与应用 | 特点 •复合晶体管 •片上电阻晶体管PNP硅外延中速切换 •高达2A大电流驱动器，如集成电路，电动机和螺线管 •片上偏置电阻 •低功耗，在驱动器 |