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Parameters:

  • Model:HQ1F2Q
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:DU
  • Package:SOT-89/SC-62

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-20V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-20V
集电极连续输出电流IC Collector Current(IC)-200mA/0.2A
基极输入电阻R1 Input Resistance(R1)0.22KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)2.2KΩ/Ohm
电阻比(R1/R2) Resistance Ratio0.1
直流电流增益hFE DC Current Gain(hFE)150
截止频率fT Transtion Frequency(fT)
耗散功率Pc Power Dissipation2.0W
Description & ApplicationsFEATURES •COMPOUND TRANSISTOR •on-chip resistor PNP silicon epitaxial transistor For mid-speed switching •Up to 2A high current drives such as ICs, motors, and solenoids available •On-chip bias resistor •Low power consumption during drive
描述与应用特点 •复合晶体管 •片上电阻晶体管PNP硅外延中速切换 •高达2A大电流驱动器,如集成电路,电动机和螺线管 •片上偏置电阻 •低功耗,在驱动器

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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HQ1F2Q
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