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Parameters:

  • Model:HSMS-282C-TR1
  • Manufacturer:HUABAN
  • Date Code:0307+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:C22
  • Package:SOT-323/SC-70

反向电压Vr
Reverse Voltage
15V
平均整流电流Io
AVerage Rectified Current
10mA
最大正向压降VF
Forward Voltage(Vf)
340mV/0.34V
最大耗散功率Pd
Power dissipation
Description & Applications• Low FIT (Failure in Time) Rate* • HSMS-282K Grounded Center Leads Provide up to 10 dB Higher Isolation • Matched Diodes for Consistent Performance • Better Thermal Conductivity for Higher Power Dissipation • These Schottky diodes are specifically designed for both analog and digital applications。 • HSMS-282x series of diodes is the best all-around choice for most applications, featuring low series resistance, low forward voltage at all current levels and good RF characteristics. • Surface Mount RF Schottky Barrier Diodes in Series.
描述与应用•低FIT(故障时间)率* •HSMS-282K接地中心信息提供多达高出10 dB的隔离 •一致的性能匹配二极管 •更好的导热性更高的功率耗散 这些肖特基二极管是专门设计用于模拟和数字应用。 •二极管HSMS-282X系列全能是最好的选择,对于大多数应用,具有低串联电阻,在目前所有级别的低正向电压和良好的RF的特点。 •表面贴装射频肖特基二极管串联。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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HSMS-282C-TR1
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