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Parameters:

  • Model:IMD16
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:D16
  • Package:SOT-163/SMT6/SC-74

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) -50V/50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) -50V/50V
集电极连续输出电流IC Collector Current(IC) -500mA/100mA
Q1基极输入电阻R1 Input Resistance(R1) 2.2KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 2.2KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio 1
Q2基极输入电阻R1 Input Resistance(R1) 100KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)  
Q2电阻比(R1/R2) Q2 Resistance Ratio  
直流电流增益hFE DC Current Gain(hFE)  
截止频率fT Transtion Frequency(fT) 250MHz
耗散功率Pc Power Dissipation 300mW/0.3W
Description & Applications Features •Power management (dual digital transistors) •Two digital class transistors in a SMT package. •Up to 500mA can be driver. •Low VCE (sat) of driver transistors for low power dissipation
描述与应用 特点 •电源管理(双数字晶体管) •两个数字在SMT包装类晶体管。 •高达500mA的驱动程序。 •低VCE(sat)的低功耗驱动器晶体管。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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IMD16
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