| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流IC Collector Current(IC) | 600mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 2.2KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | |
| Q2基极输入电阻R1 Input Resistance(R1) | 2.2KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 100~600 |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 耗散功率Pc Power Dissipation | 300mW/0.3W |
| Description & Applications | Features •General purpose (dual digital transistors) •Two DTC323T chips in a SMT package. •Mounting possible with SMT3 automatic mounting machines. •Transistor elements are independent, eliminating interference. |
| 描述与应用 | 特点 •通用（双数字晶体管） •两个DTC323T的芯片在SMT包装。 •安装可能与SMT3可能自动装配机。 •晶体管元素是独立的，消除干扰。 |