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Parameters:

  • Model:IRLML6302
  • Manufacturer:HUABAN
  • Date Code:06+1rnopb 05+rohs8700
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:1CKU/CA/CB/CC/C1/1C/CE/CF/CG
  • Package:SOT-23/SC-59

最大源漏极电压Vds
Drain-Source Voltage
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V
最大漏极电流Id
Drain Current
-780mA/-0.78A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.60Ω @-600mA,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.70V
耗散功率Pd
Power Dissipation
540mW/0.54W
Description & ApplicationsUltra Low On-Resistance P-Channel MOSFET Surface Mount lAvailable in Tape & Reel Low Gate Charge
描述与应用超低导通电阻 P沟道MOSFET 表面贴装 在磁带和卷轴lAvailable 低栅极电荷

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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IRLML6302
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