| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| 集电极连续输出电流IC Collector Current(IC) | -100mA/-0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 22KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.47 |
| 直流电流增益hFE DC Current Gain(hFE) | 85~340 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.15W/150mW |
| Description & Applications | FEATURES •SILICON TRANSISTOR •RESISTOR BUILT-IN TYPE PNP TRANSISTOR •Compact package •Resistors built-in type •Complementary to KA4xxx |
| 描述与应用 | 特点 •硅晶体管 •电阻器内置型PNP晶体管 •紧凑的封装 •内置式电阻器 •互补KA4xxx的 |