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Parameters:

  • Model:KRX202E-RTK
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:4000
  • Min Order:10
  • Mark/silk print/code/type:DB
  • Package:SOT-563/TES6

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) 50V/-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) 50V/-50V
集电极连续输出电流IC Collector Current(IC) 100mA/-100mA
Q1基极输入电阻R1 Input Resistance(R1) 22KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 22KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio 1
Q2基极输入电阻R1 Input Resistance(R1) 22KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 22KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio 1
直流电流增益hFE DC Current Gain(hFE) 70~120
截止频率fT Transtion Frequency(fT) 200MHz
耗散功率Pc Power Dissipation 200mW/0.2W
Description & Applications Features •EPITAXIAL PLANAR PNP TRANSISTOR •INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. •Including two devices in TES6.(Thin Extreme Super mini type with 6 pin.) •With Built-in Bias Resistors. •Simplify Circuit Design. •Reduce a Quantity of Parts and Manufacturing Process.
描述与应用 特点 •外延平面PNP晶体管 •接口电路和驱动器电路中的应用。 •包括两个设备(薄至尊超级迷你型6针)。在TES6。 •内置偏置电阻器。 •简化电路设计。 •减少了部件数量和制造工艺。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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KRX202E-RTK
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