KST06 NPN Transistors(BJT) 80V 500mA/0.5A 100MHz 50 250mV/0.25V SOT-23/SC-59 marking 1G|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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KST06 NPN Transistors(BJT) 80V 500mA/0.5A 100MHz 50 250mV/0.25V SOT-23/SC-59 marking 1G

Inventory:270000 Min Order：10

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Model：KST06
Manufacturer：HUABAN
Date Code：05+ 05+
Standard Package：3000
Min Order：10
Mark/silk print/code/type：1G
Package：SOT-23/SC-59

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	80V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	80V
集电极连续输出电流IC Collector Current(IC)	500mA/0.5A
截止频率fT Transtion Frequency(fT)	100MHz
直流电流增益hFE DC Current Gain(hFE)	50
管压降VCE（sat） Collector-Emitter Saturation Voltage	250mV/0.25V
耗散功率Pc Power Dissipation	350mW/0.35W
Description & Applications	Driver Transistor • Collector-Emitter Voltage: VCEO = KST05: 60V KST06: 80V • Collector Power Dissipation: PC (max) = 350mW • Complement to KST55/56
描述与应用	驱动晶体管 •集电极 - 发射极电压VCEO = KST05：60V KST06：80V •集电极耗散功率：PC（最大值）=350MW •KST55/56补

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