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Parameters:

  • Model:KST5551MTF
  • Manufacturer:HUABAN
  • Date Code:04+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:G1
  • Package:SOT-23/SC-59

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
180V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
160V
集电极连续输出电流IC
Collector Current(IC)
600mA/0.6A
截止频率fT
Transtion Frequency(fT)
300MHz
直流电流增益hFE
DC Current Gain(hFE)
80~250
管压降VCE(sat)
Collector-Emitter Saturation Voltage
200mV/0.2V
耗散功率Pc
Power Dissipation
350mW/0.35W
Description & ApplicationsAmplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC (max)=350mW
描述与应用晶体管放大器 •集电极 - 发射极电压VCEO=160V •集电极耗散功率:PC(最大值)=350MW

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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KST5551MTF
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