KTD1003A NPN Transistors(BJT) 60V 1A 150MHz~250MHz 800~3200 170mV~300mV SOT-89 marking LA high current application|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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KTD1003A NPN Transistors(BJT) 60V 1A 150MHz~250MHz 800~3200 170mV~300mV SOT-89 marking LA high current application

Inventory:39300 Min Order：10

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Model：KTD1003A
Manufacturer：HUABAN
Date Code：05+ 05+nopb200
Standard Package：1000
Min Order：10
Mark/silk print/code/type：LA
Package：SOT-89

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	60V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	50V
集电极连续输出电流IC Collector Current(IC)	1A
截止频率fT Transtion Frequency(fT)	150MHz~250MHz
直流电流增益hFE DC Current Gain(hFE)	800~3200
管压降VCE（sat） Collector-Emitter Saturation Voltage	170mV~300mV
耗散功率Pc Power Dissipation
Description & Applications	HIGH CURRENT APPLICATION. hight DC current gain:hfe=800~3200 wide area of safe operation low collector saturation voltage
描述与应用	高电流应用。高度直流电流增益：HFE=800〜3200 安全工作区广低集电极饱和度电压

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