| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V/-60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) | 150mA/-150mA |
| 截止频率fT Transtion Frequency(fT) | 80MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 120~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 100mV/-100mV |
| 耗散功率Pc Power Dissipation | 200mW |
| Description & Applications | Features •EPITAXIAL PLANAR NPN/PNP TRANSISTOR •Including two devices in US6.(Ultra Super mini type with 6 leads) •Simplify circuit design. •Reduce a quantity of parts and manufacturing process. •GENERAL PURPOSE APPLICATION. |
| 描述与应用 | 特点 •外延平面NPN/ PNP晶体管 •在US6包括两个设备（超超级迷你型6引线） •简化电路设计。 •减少了部件数量和制造工艺。 •通用应用。 |