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Parameters:

  • Model:ma2z785
  • Manufacturer:HUABAN
  • Date Code:05+NOPB2RM+2200 05+NOPB2RM+2200
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:2E
  • Package:SOD323/SC-76/USC/0805

反向电压Vr
Reverse Voltage
50V
平均整流电流Io
AVerage Rectified Current
100mA/0.1A
最大正向压降VF
Forward Voltage(Vf)
550mV/0.55V
最大耗散功率Pd
Power dissipation
Description & Applications• Schottky Barrier Diodes (SBD) • Silicon epitaxial planar type • For super-high speed switching circuit • For small current rectification • S-mini type 2-pin package, allowing high-density mounting • Allowing to rectify under (IF(AV)= 100 mA) condition • Optimum for high-frequency rectification because of its shortreverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency • Reverse voltage VR (DC value) = 50 V guaranteed
描述与应用•肖特基势垒二极管(SBD) •硅外延平面型 •超高速开关电路 •小电流整流 •S-迷你型2引脚封装,允许高密度安装 •允许下,以纠正(IF(AV)=100 mA时)条件 •最适用于高频整流,快速反向恢复时间。 •低VF(正向电压上升),整流效率高 •反向电压VR(DC值)=50 V

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ma2z785
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