MBT4403 PNP transistors（BJT） -40V -600mA/- 0.6A 200MHz 100~300 -750mV/-0.75V SOT-23/SC-59 marking 2T high breakdown voltage|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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MBT4403 PNP transistors（BJT） -40V -600mA/- 0.6A 200MHz 100~300 -750mV/-0.75V SOT-23/SC-59 marking 2T high breakdown voltage

Inventory:3000 Min Order：10

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Model：MBT4403
Manufacturer：HUABAN
Date Code：05+
Standard Package：3000
Min Order：10
Mark/silk print/code/type：2T
Package：SOT-23/SC-59

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	-40V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	−40V
集电极连续输出电流IC Collector Current(IC)	−600mA/- 0.6A
截止频率fT Transtion Frequency(fT)	200MHz
直流电流增益hFE DC Current Gain(hFE)	100~300
管压降VCE（sat） Collector-Emitter SaturationVoltage	-750mV/-0.75V
耗散功率Pc PoWer Dissipation	225mW/0.225W
Description & Applications	PNP epitaxial planar transistor Description The HMBT4403 is designed for general purpose applications requiring high breakdown voltages
描述与应用	PNP外延平面晶体管描述 HMBT4403是专为一般用途的应用，要求高的击穿电压

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