最大源漏极电压Vds
Drain-Source Voltage | 30V/-30V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 10V/10V |
最大漏极电流Id
Drain Current | 650mA/-400mA |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 5.2Ω@ VGS =1.5V, ID =10mA/20Ω@ VGS =-1.5V, ID =-10mA |
开启电压Vgs（th）
Gate-Source Threshold Voltage | 0.4~1.3V/-0.4~-1.4V |
耗散功率Pd
Power Dissipation | 800mW/0.8W |
| Description & Applications | Ultrahigh-Speed Switching Applications Features • The MCH6615 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling high-density mounting. • Excellent ON-resistance characteristic. • 2.5V drive. |
| 描述与应用 | 超高速开关应用 特点 •MCH6615采用N沟道MOSFET和一个P沟道MOSFET，具有低导通电阻和高速开关，从而实现高密度安装。 •优秀的导通电阻特性。 •2.5V驱动。 |