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Parameters:

  • Model:MJD200T4
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:2500
  • Min Order:10
  • Mark/silk print/code/type:J200
  • Package:TO-252/DPAK

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
25V
集电极连续输出电流IC
Collector Current(IC)
5A
截止频率fT
Transtion Frequency(fT)
65MHz
直流电流增益hFE
DC Current Gain(hFE)
10~180
管压降VCE(sat)
Collector-Emitter Saturation Voltage
0.3V~1.8V
耗散功率Pc
Power Dissipation
12.5W
Description & ApplicationsComplementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications Collector−Emitter Sustaining Voltage − VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain − hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2 Adc = 10 (Min) @ IC = 5 Adc • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc • High Current−Gain − Bandwidth Product − fT = 65 MHz (Min) @ IC = 100 mAdc • Annular Construction for Low Leakage − ICBO = 100 nAdc @ Rated VCB • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B 8000 V Machine Model, C 400 V • Pb−Free Packages are Available
描述与应用互补塑料 功率晶体管 NPN/ PNP硅表面DPAK 安装应用 集电极 - 发射极电压 - VCEO(SUS)  = 25 VDC(最小)@ IC= 10 MADC •高直流电流增益 - HFE=70(分钟)@ IC= 500 MADC =45(最小)@ IC= 2 ADC =10(最小)@ IC= 5 ADC •铅形成表面贴装塑料套中的应用 (没有后缀) •低集电极 - 发射极饱和电压 - VCE(星期六)= 0.3 VDC(最大)@ IC=500 MADC = 0.75 VDC(最大)@ IC= 2.0 ADC •高电流增益 - 带宽积 - FT =65兆赫(最小)@ IC=100 MADC •低漏电流的环形施工 - ICBO=100 NADC额定VCB •环氧会见UL 94 V-0@0.125 •ESD额定值:人体模型,3B? 8000 V 机器型号,C? 400 V •无铅包可用

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MJD200T4
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