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Parameters:

  • Model:MMBT200
  • Manufacturer:HUABAN
  • Date Code:05+ 10+ROHS104K
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:N2
  • Package:SOT-23/SC-59

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−45V
集电极连续输出电流IC
Collector Current(IC)
−500mA/-0.5A
截止频率fT
Transtion Frequency(fT)
250MHz
直流电流增益hFE
DC Current Gain(hFE)
100~350
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-400mV/-0.4V
耗散功率Pc
PoWer Dissipation
350mW/0.35W
Description & ApplicationsPNP epitaxial planar transistor PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA
描述与应用PNP外延平面晶体管 PNP通用放大器 此装置是专为通用放大器应用在集电极电流300毫安而设计

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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MMBT200
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