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Parameters:

  • Model:MMBT6520LT1
  • Manufacturer:HUABAN
  • Date Code:06+ 06+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:2Z
  • Package:SOT-23/SC-59

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-350V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
-350V
集电极连续输出电流IC
Collector Current(IC)
−500mA/-0.5A
截止频率fT
Transtion Frequency(fT)
40~200MHz
直流电流增益hFE
DC Current Gain(hFE)
20~200
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-1000mV/-1V
耗散功率Pc
PoWer Dissipation
225mW/0.225W
Description & ApplicationsHigh Voltage Transistor PNP Silicon
描述与应用PNP硅高压晶体管

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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MMBT6520LT1
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