集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −30V |
集电极连续输出电流IC
Collector Current(IC) | -1.2A |
截止频率fT
Transtion Frequency(fT) | 125MHz |
直流电流增益hFE
DC Current Gain(hFE) | 20000 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -1.5V |
耗散功率Pc
PoWer Dissipation | 350mW/0.35W |
| Description & Applications | PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. |
| 描述与应用 | PNP达林顿晶体管 该设备是专为要求极高的电流为800毫安的电流增益的应用而设计。 |