| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
| 最大漏极电流Id Drain Current | 300mA/0.3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 1.7Ω/Ohm @1A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-3.5V |
| 耗散功率Pd Power Dissipation | 800mW/0.8W |
| Description & Applications | Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. •Silicon Gate for Fast Switching Speeds •Low Drive Requirement •The SOT−223 Package can be Soldered Using Wave or Reflow •The Formed Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die •Pb−Free Package is Available |
| 描述与应用 | •硅栅快速开关速度 •低驱动要求 •SOT-223包装可以使用波或回流焊接 所形成的线索在焊接热应力吸收 消除模具损坏的可能性 •无铅包装是可用 |