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  • Model:MRF9811T1
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:23K
  • Package:SOT-143

最大源漏极电压Vds
Drain-Source Voltage
15V
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-5V
漏极电流(Vgs=0V)IDSS
Drain Current
350mA
关断电压Vgs(off)
Gate-Source Cut-off Voltage
耗散功率Pd
Power Dissipation
770mW/0.77W
Description & ApplicationsThe RF Small Signal Line N–Channel Depletion–Mode MESFET Description Designed for use in driver stages of moderate power RF amplifiers to 2 GHz. Typical applications are cellular radios and personal communication .transmitters such as AMPS, ETACS, NMT, GSM, PCN, JDC and DECT Feature Performance Specifications at 900 MHz, 5.8 V Output Power = 21 dBm Power Gain = 14 dB Drain Efficiency = 55% Plastic Surface Mount Package Order MRF9811T1 for Tape and Reel Packaging
描述与应用RF小信号线 N沟道耗尽型MESFET 描述 专为中等功率RF放大器至2 GHz的驱动级使用。典型的应用是蜂窝无线电发射器如AMPS,ETACS,NMT,GSM,PCN,JDC和DECT和个人通信。 特点 性能规格在900 MHz,5.8 V时 输出功率= 21 dBm 功率增益= 14dB 漏极效率=55% 塑料表面贴装封装

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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