集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 10V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 5V |
集电极连续输出电流IC
Collector Current(IC) | 40mA |
截止频率fT
Transtion Frequency(fT) | 4.5GHZ |
直流电流增益hFE
DC Current Gain(hFE) | 80~140 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 80mW |
| Description & Applications | TOSHIBA Transistor Silicon NPN Epitaxial Planar Type .
* VHF~UHF Band Low-Noise Amplifier Applications
* VHF~UHF Band Oscillator Applications
* Superior performance in oscillator applications
* Superior noise characteristics: NF = 1.4 dB, |S21e|2= 8.5 dB (f = 1 GHz) |
| 描述与应用 | 东芝晶体管NPN硅外延平面型。
* VHF??UHF频段低噪声放大器应用
* VHF??UHF频带振荡器应用
*振荡器应用中的卓越性能
*卓越的噪声特性：NF=1.4，S21E|2= 8.5（F =1GHZ） |