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Parameters:

  • Model:MTM861240L
  • Manufacturer:HUABAN
  • Date Code:07+NOPB 07+ROHS
  • Standard Package:10000
  • Min Order:100
  • Mark/silk print/code/type:DM
  • Package:SOT-563

最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
10V
最大漏极电流Id
Drain Current
-2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.1Ω @-1A,-4V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.4--1.3V
耗散功率Pd
Power Dissipation
540mW/0.54W
Description & ApplicationsP-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Small Package Outline Surface Mount Device
描述与应用P沟道增强模式 功率MOSFET 简单的驱动要求 小封装 表面贴装设备

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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MTM861240L
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