| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-50V/50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
-50V/50V |
| 集电极连续输出电流IC Collector Current(IC) |
-100mA/100mA |
| Q1基极输入电阻R1 Input Resistance(R1) |
10KΩ/10KΩ |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
10KΩ/10KΩ |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1 Input Resistance(R1) |
10KΩ/10KΩ |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
10KΩ/10KΩ |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
1 |
| 直流电流增益hFE DC Current Gain(hFE) |
60 |
| 截止频率fT Transtion Frequency(fT) |
|
| 耗散功率Pc Power Dissipation |
250mW/0.25W |
| Description & Applications |
Features •Dual Bias Resistor Transistors •NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network •Simplifies Circuit Design •Reduces Board Space •Reduces Component Count •Available in 8 mm, 7 inch/3000 Unit Tape and Reel •These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant |
| 描述与应用 |
特点 •双偏置电阻晶体管 •NPN和PNP硅表面贴装晶体管与单片偏置电阻网络 •简化电路设计 •缩小板级空间 •减少元件数 •8毫米，7 inch/3000单位带和卷轴 •这些器件是无铅，无卤/ BFR免费，并符合RoHS标准 |