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  • Model:NK424
  • Manufacturer:HUABAN
  • Date Code:3 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:U1E
  • Package:SOT-143

最大源漏极电压Vds Drain-Source Voltage18V
最大栅源极电压Vgs(±) Gate-Source Voltage8V
最大漏极电流Id Drain Current25mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage-1.0-1.0V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsNEC'S 3.2 V, 3 W, L/S BAND MEDIUM POWER SILICON LD-MOSFET NEC's NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or 34.6 dBm output power at 2.8 V by varying the gate voltage as a power control function. FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. (f = 470 MHz) NF2 = 0.8 dB TYP. (f = 55 MHz) • High Power Gain : GPS = 19.0 dB TYP. (f = 470 MHz) • Suitable for use as RF amplifier in CATV tuner. • Automatically Mounting : Embossed Type Taping • Package : 4 Pins Mini Mold
描述与应用NEC的3.2 V,W,L/ S频段中功率硅LD-MOSFET NEC的NE5520379A是一个N沟道功率MOSFET硅 而特别设计的发送功率的放大器,用于 3.2 V GSM900手机。模具是采用NEC的制造 NEWMOS技术(NEC的0.6微米WSI门横向MOSFET),并装在一个表面贴装封装。此设备 可提供35.5 dBm的输出功率在915兆赫和3.2 V,或 34.6 dBm的输出功率的功率控制功能,通过改变栅极电压的2.8 V。 •低VDD使用方法:(VDS=3.5 V) •驾驶电池 •低噪声系数:NF1= 2.0 dB(典型值)。 (六= 470兆赫) NF2=0.8 dB典型值。 (六= 55兆赫) •高功率增益:GPS=19.0 dB典型值。 (六= 470兆赫) •适合用作RF放大器CATV调谐器。 •自动安装:压花类型大坪 •包装:4针脚

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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