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Parameters:

  • Model:NSL12AWT1
  • Manufacturer:HUABAN
  • Date Code:04+ 04+150PCSROHS
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:11X
  • Package:SC70-6/SOT-363/SC-88

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-12V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
-12V
集电极连续输出电流IC
Collector Current(IC)
-2A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
100~300
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-290mV/-0.29V
耗散功率Pc
PoWer Dissipation
450mW/0.45W
Description & ApplicationsHigh Current Surface Mount PNP Silicon Transistor for Battery Operated Applications Features: • High Current Capability • High Power Handling • Low VCE(s) • Small Size
描述与应用PNP硅晶体管适合电池供电应用 特点: •高电流能力 •高功率处理 •低VCE(S) •小尺寸

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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NSL12AWT1
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