最大源漏极电压Vds
Drain-Source Voltage | -30V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | -20V |
最大漏极电流Id
Drain Current | -3.7A |
源漏极导通电阻Rds
Drain-Source On-State
Resistance | 110mΩ@ VGS = -4.5V, ID = -2.7A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -1~-3V |
耗散功率Pd
Power Dissipation | 1.25W |
| Description & Applications | Power MOSFET Features • Leading −30 V Trench Process for Low RDS(on) • Low Profile Package Suitable for Portable Applications • Surface Mount TSOP−6 Package Saves Board Space • Improved Efficiency for Battery Applications • Pb−Free Package is Available Applications • Battery Management and Switching • Load Switching • Battery Protection |
| 描述与应用 | 功率MOSFET 特点 •领导-30 V沟道工艺的低RDS（ON） •薄型封装，适合于便携式应用 •表面贴装TSOP-6封装节省电路板空间 •电池应用的效率的改进 •无铅包装是可用 应用 •电池管理和交换 •负载开关 •电池保护 |