| 最大源漏极电压Vds Drain-Source Voltage | 25V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 400mΩ@ VGS = -2.7V, ID = -0.2A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.65~1.5V |
| 耗散功率Pd Power Dissipation | 630mW/0.63W |
| Description & Applications | Small Signal MOSFET Features • Advance Planar Technology for Fast Switching, Low RDS(on) • Higher Efficiency Extending Battery Life • Pb−Free Packages are Available Applications • Boost and Buck Converter • Load Switch • Battery Protection |
| 描述与应用 | 小信号MOSFET 特点 •高级平面技术的快速开关，低RDS（ON） •更高的效率延长电池寿命 •无铅包可用 应用 •升压和降压转换器 •负荷开关 •电池保护 |