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Parameters:

  • Model:P0903BDG
  • Manufacturer:HUABAN
  • Date Code:06+
  • Standard Package:2000
  • Min Order:10
  • Mark/silk print/code/type:P0903BDG
  • Package:TO-252/D-PAK

最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage
最大漏极电流Id Drain Current50A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance7.5Ω/Ohm @25A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1-3V
耗散功率Pd Power Dissipation50W
Description & ApplicationsN-Channel Logic Level Enhancement Mode Field Effect Transistor
描述与应用N沟道逻辑电平增强 模式场效应晶体管

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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P0903BDG
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