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Parameters:

  • Model:PBSS5540Z
  • Manufacturer:HUABAN
  • Date Code:nopb 05+NOPB1700
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:5540
  • Package:SOT-223/TO-261AA

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−40V
集电极连续输出电流IC
Collector Current(IC)
-5A
截止频率fT
Transtion Frequency(fT)
120MHz
直流电流增益hFE
DC Current Gain(hFE)
350
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-170mV/-0.17V
耗散功率Pc
PoWer Dissipation
1.35W
Description & Applications40 V low VCE(sat) PNP transistor FEATURES • Low collect • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation. • NPN complement: PBSS4540Z. APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers) • MOSFET driver applications
描述与应用40伏的低VCE(sat)的PNP晶体管 特点 •低收集 •低集电极 - 发射极饱和电压 •高电流能力 •提高设备的可靠性,由于减少热量的产生。 •NPN补充:PBSS4540Z。 应用 •供电线路开关电路 •电池管理应用 •DC / DC转换器应用 •闪光灯单元 •重载电池供电设备(电机和灯驱动器) •MOSFET驱动器应用

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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PBSS5540Z
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