| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 47KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| 电阻比(R1/R2) Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 100 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.25W /250mW |
| Description & Applications | FEATURES • Built-in bias resistor R1 (typ. 4.7 kΩ) • Simplification of circuit design • Reduces number of components and board space •100 mA output current capability |
| 描述与应用 | 特性 •内置偏置电阻R1（典型值4.7kΩ） •简化电路设计 •减少元件数量和电路板空间 •100 mA输出电流能力 |