| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V/60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V/50V |
| 集电极连续输出电流IC Collector Current(IC) | -150mA/150mA |
| 截止频率fT Transtion Frequency(fT) | 190MHz/100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 250 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | -1500mA/1500mA |
| 耗散功率Pc Power Dissipation | 300mW |
| Description & Applications | Features • NPN/PNP general purpose double transistors • Simplified circuit design • Reduced component count • Reduced pick and place costs APPLICATIONS • General-purpose switching and amplification |
| 描述与应用 | 特点 •NPN/ PNP通用双晶体管 •简化电路设计 •减少元件数量 •减少取放成本 应用 •通用开关和放大 |