| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 22KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 22KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 1 |
| Q2基极输入电阻R1 Input Resistance(R1) | 22KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 22KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | 60 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 300mW/0.3W |
| Description & Applications | Features • NPN/NPN resistor-equipped transistors; • Built-in bias resistors • Reduces component count • Reduces pick and place costs • Simplifies circuit design APPLICATIONS • Low current peripheral drivers • Replacement of general purpose transistors in digital applications • Control of IC inputs |
| 描述与应用 | 特点 •NPN/ NPN电阻配备晶体管; •内置偏置电阻 •减少了元件数量 •减少取放成本 •简化电路设计 应用 •低电流外设驱动程序 •通用晶体管数字应用的更换 •控制IC投入 |