最大源漏极电压Vds
Drain-Source Voltage | 30V/-20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 12V/12V |
最大漏极电流Id
Drain Current | 1.5A/-1.5A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 360mΩ@ VGS =2.5V, ID =1A/430mΩ@ VGS =-2.5V, ID =-0.75A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | 0.5~1.5V/-0.7~-2V |
耗散功率Pd
Power Dissipation | 1.25W |
| Description & Applications | Small switching Features Low on-resistance. Built-in G-S Protection Diode. Small and Surface Mount Package (TSMT6). Application Power switching, DC / DC converter. |
| 描述与应用 | 小开关 特点 低导通电阻。 内置G-S的保护二极管。 小和表面贴装封装（TSMT6）。 应用 电源开关，DC / DC变换器。 |