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Parameters:

  • Model:RN1101FT
  • Manufacturer:HUABAN
  • Date Code:06NOPB6790 06NOPB6790
  • Standard Package:4000
  • Min Order:10
  • Mark/silk print/code/type:XA
  • Package:SOT-623/TESM

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)4.7KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)4.7KΩ/Ohm
电阻比(R1/R2) Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)30
截止频率fT Transtion Frequency(fT)250MHz
耗散功率Pc Power Dissipation0.1W/100mW
Description & ApplicationsFeatures • Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • High-density mount is possible because of devices housed in very thin TESM packages. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. • Wide range of resistor values are available to use in various circuit designs. • Complementary to RN2101FT
描述与应用特性 •开关,逆变电路,接口电路和驱动器电路应用 •高密度安装是可能因为设备安置非常薄TESM包。 •将偏置电阻晶体管减少了部件数量。 减少零件计数使能越来越紧凑设备和制造节省组装成本。 •电阻值范围广,可使用在各种电路设计。 •对管是RN2101FT

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RN1101FT
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