| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 4.7KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | 30 |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 耗散功率Pc Power Dissipation | 0.1W/100mW |
| Description & Applications | Features • Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • High-density mount is possible because of devices housed in very thin TESM packages. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. • Wide range of resistor values are available to use in various circuit designs. • Complementary to RN2101FT |
| 描述与应用 | 特性 •开关，逆变电路，接口电路和驱动器电路应用 •高密度安装是可能因为设备安置非常薄TESM包。 •将偏置电阻晶体管减少了部件数量。 减少零件计数使能越来越紧凑设备和制造节省组装成本。 •电阻值范围广，可使用在各种电路设计。 •对管是RN2101FT |