| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流IC Collector Current(IC) | 300mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 2.2KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | |
| Q2基极输入电阻R1 Input Resistance(R1) | 2.2KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 200~700 |
| 截止频率fT Transtion Frequency(fT) | 30MHz |
| 耗散功率Pc Power Dissipation | 300mW/0.3W |
| Description & Applications | Features • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) • For use in Muting and Switching Applications • Emitter-base voltage is high: VEBO = 25 V (max) • Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. |
| 描述与应用 | 特点 •东芝晶体管的硅NPN外延型（PCT进程）（偏置电阻内置晶体管）用于静音和开关应用 •发射极基极电压高：VEBO=25 V（最大值） •将偏置电阻晶体管，减少了部件数量。减少零件数，使制造更加紧凑的设备和节省组装成本 |