| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC Collector Current(IC) |
100mA |
| Q1基极输入电阻R1 Input Resistance(R1) |
47KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1 Input Resistance(R1) |
47KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
1 |
| 直流电流增益hFE DC Current Gain(hFE) |
80 |
| 截止频率fT Transtion Frequency(fT) |
250MHz |
| 耗散功率Pc Power Dissipation |
100mW/0.1W |
| Description & Applications |
Features • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) • Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. • Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. • A wide range of resistor values is available for use in various circuit designs. • Complementary to RN2701JE~RN2706JE APPLICATIONS • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| 描述与应用 |
特点 •东芝晶体管的硅NPN外延式（PCT的进程）（偏置电阻内置晶体管） •两个设备都纳入一个极端超小型封装（5针）。 •将偏置电阻晶体管，减少了部件数量。减少部件数量，使制造比以往更紧凑的设备和降低装配成本。 •广泛的电阻值可用于在各种电路设计。 •互补到RN2701JE〜RN2706JE的 应用 •开关，逆变电路，接口电路和驱动器电路应用 |