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Parameters:

  • Model:RN1968FS
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:10000
  • Min Order:100
  • Mark/silk print/code/type:JT
  • Package:SOT-963/FS6

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) 20V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) 20V
集电极连续输出电流IC Collector Current(IC) 50mA
Q1基极输入电阻R1 Input Resistance(R1) 22KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 47KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio 0.468
Q2基极输入电阻R1 Input Resistance(R1) 22KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 47KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio 0.468
直流电流增益hFE DC Current Gain(hFE) 120
截止频率fT Transtion Frequency(fT)  
耗散功率Pc Power Dissipation 50mW
Description & Applications Features •TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) •Two devices are incorporated into a fine pitch Small Mold (6 pin) package. •Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. •Complementary to RN2967FS to RN2969FS Applications •Switching Applications •Inverter Circuit Applications •Interface Circuit Applications •Driver Circuit Applications
描述与应用 特点 •东芝晶体管的硅NPN外延式(PCT程序)(偏置电阻内置晶体管) •两个设备都纳入细间距小型模具(6针)封装。 •将偏置电阻晶体管,减少了部件数量。减少零件数,使制造更加紧凑的设备和节省组装成本。 •互补RN2967FS的到RN2969FS 应用 •开关应用 •逆变器电路应用 •接口电路的应用 •驱动器电路应用

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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RN1968FS
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